Edge emitter display device

ABSTRACT

An edge emitter display device is provided comprising an anode (1) and a cathode (2). Cathode (2) is situated at a level above and laterally displaced from anode (1), providing an opening for a window above anode (1). Cathode (2) has an emitting edge (4) which is operable to emit field electrons when a positive voltage is applied to anode (1) with respect to cathode (2). A phosphor layer is disposed above anode (1) and below the level of cathode (2) and is operable to luminesce when struck with the electrons emitted from the emitting edge (4).

BACKGROUND OF INVENTION

1. Field of Invention

The invention relates in general to electronics and more specifically toan edge emitter display device, having particular reference to datadisplay devices for use as a screen or display, as well as use invacuum-tube microelectronics as super-high speed heat-and-radiationresistant devices.

2. Description of Prior Art

Known in the present state of the art is a cathode-luminescent display(cf. L'Onde Electrique, Novembre-Decembre 1991, Vol. 71, No. 6, pp.36-42), comprising an array source of electrons and a screen situatedabove the surface of the source of electrons and electrically insulatedfrom it.

The source of electrons is in fact a substrate, on which ribbon-typecathodes (arranged in columns) and gates (arranged in rows) areprovided. The columns and rows are separated from one another by adielectric layer and intersect one another. Holes are provided at theplaces of intersection of the ribbon-type gates (or rows) and thedielectric layer, and the holes are adapted to accept needle-typeemitters whose bases are situated either directly on the ribbon-typecathode (or column) or on the layer of a load resistor applied to theribbon-type cathodes. The tips of the needle emitters are at the levelof the edges of the holes in the ribbon-type gates (or rows).

Since a display (monitor) can be either monochrome or color. Amonochrome display is essentially a transparent plate on which atransparent electrically conducting coating is deposited; i.e., thefirst coating appearing as parallel electrodes performing the functionof cathode buses (columns), and the second coating appearing as parallelelectrodes performing the function of grid buses (rows), and a phosphorlayer. A color display on a transparent electrically conducting layerhas green, red, and blue-emitting areas of the phosphor layer, which arebrought in coincidence with the areas established by the places ofcrossover of the ribbon-type cathodes and gates. Both the display andthe source of electrons are enclosed in common air-evacuated casing.

A 400 volt constant positive voltage is applied to the display withrespect to the ribbon-type cathodes, while a 50 to 80 volt constantpositive voltage is applied to the ribbon-type gates with respect to theribbon-type cathodes. In a single element or pixel cell of such anarrangement, the operation proceeds in the following manner.

Due to a short spacing between the edge of a hole in the ribbon-typegate and the tip of a needle-type emitter (i.e., of the order of 0.4-0.5μm), a high-intensity (in excess of 10⁷ volts per centimeter or V/cm)electric field is established at the emitter tip, and field emission ofelectrons from the emitter tip begins. The emitted electrons come underthe effect of the accelerating electric field of the display and, whileflying towards the display, the electrons bombard the phosphor, thuscausing it to luminesce.

Each element (pixel) located at the crossover of the ribbon-type gateand the ribbon-type cathode provides for glow of a dot on the display.Thus, a monochrome or color picture can be established on the display byconsecutively activating the respective ribbon-type gates with respectto the respective ribbon-type cathodes with a definite switch-over time.

This type of cathodoluminescent display is characterized by highvoltages (that is, 400-500V) applied to the display, which results inhigher power consumption which affects the operating stability anddependability of the display. During operation under the bombardingeffect of the ions of the residual gases, emitter tips change geometryand undergo an increased radius of curvature which results in the loweroperating stability. Ionization activity of any residual gas may occurdue to a high voltage (400-500V) applied to the display and anadequately large spacing (200 μm) between the tips of the emitters andthe display surface. Such an increase in the radius of curvature of theemitter tips decreases the intensity of the electric field at the tips,and the field emission current is reduced, causing a resultant lowerphosphor surface brightness. Such displays have but a short servicelife, usually not exceeding 9000 hours. Due to an increased risk ofelectrical breakdown between the display and the source of electrons athigh anode voltages, these types of displays have had lowerdependability.

Moreover, production techniques for such displays are complicated andexpensive due to a sophisticated process of forming submicron-sizeemitting cells. These displays thus are expensive, which discouragesproduction of cathodoluminescent displays measuring 200×200 mm and over.

Known in the art is another device, comprising a wedge-shaped array offield emitters and an anode positioned above the array surface (cfWedge-shaped field emitter array for flat display, Kaneko A., Kanno T.,Tomi K., Kitagawa M., and Hiraqi T. T. T. IEEE Trans Electron Devices,1991, V. 38, No. 10, 2395-2397).

The field-emitter array in such a device is in fact a dielectricsubstrate, provided with parallel rows of ribbon-type aluminum cathodesand parallel rows of ribbon-type chromium gates. The rows of cathodesand of anodes intersect one another and are separated by a dielectriclayer. Chromium-film emitters are provided at the places of intersectionof the rows, being applied to an aluminum layer so as to form abilateral saw-tooth pattern.

A gate is provided on the dielectric layer, having openings followingthe outline of the pattern of the emitters along the entire perimeterthereof with a gap of 1 μm. The plane of the gate is located about 250nm over the plane of the film emitters. The emitting surface is ineffect the edge of the end face of a film emitter throughout theperimeter of the saw-tooth pattern.

The anode is essentially a glass transparent plate, having a transparentelectrically conducting coating and a phosphor coating applied to itssurface. The anode is spaced a few millimeters apart from the surface ofthe field-emitter array, and the device is hermetically sealed and airis evacuated therefrom.

At a typical one of the intersections of the rows of ribbon-typecathodes and ribbon-type gates, the operation is as follows. A 300 Vconstant positive voltage is applied to the anode with respect to theribbon-type cathode, and a 50 to 80 V constant positive voltage isapplied to the ribbon-type gate with respect to the ribbon-type cathode.Due to a short spacing between the edge of emitter end face and the edgeof the gate hole (that is, about 1 μm), a high-intensity electric fieldis established at the edge of the emitter end face. Field emission ofelectrons from the edge of the emitter is thus established. The emittedelectrons come under the effect of the accelerating electric field ofthe anode flying towards the anode and bombarding the phosphor to causeit to luminesce. A picture can be created on the display byconsecutively turning on the respective ribbon-type gates with therespective ribbon-type cathodes with a definite switch-over time.

This device features high anode voltage (+300V) and a low workingpressure of residual gases. An adequately high anode voltage must beapplied in order that the majority of the emitted electrons are in theanode circuit rather than in the gate circuit, and also to cause aneffective phosphor luminescence, since it is seen against a lightbackground, that is, from an anode surface devoid of phosphor.

A low pressure of the residual gases is necessary to reduce the dangerof ionization of the residual gas in the space confined between theanode and the field-emitter array. Gas ionization is very much likelydue to the spacing (a few millimeters) between the anode and the array.However, a low residual gas pressure is difficult to maintain in thedevices during prolonged operation, due to gas entry from thesurrounding atmosphere and gas coming from the structural componentsinside the hermetically sealed casing of the device.

Due to increased pressure in the interior of the device as time passes,high anode voltage, and large spacing between the anode and the array ofthe field-emission cathodes, the molecules of residual gas are ionizedin the anode-to-array space. The ions so produced bombard the emittingedge of the emitter end face, thus increasing the radius of curvature ofthe edge. As a result, the intensity of the electric field at the edgeis decreased and the magnitude of field-emission current is reduced.Furthermore, the phosphor luminance at any set voltage level is reduced,and the device thus features a low working stability over time in use.In addition, the device in question fails to provide a high-resolution(15-20 lines/mm) picture, due to a defocusing of electron beams, andalso produces a harmful radiation effect due to a relatively high anodevoltage.

Known in the art presently is a vacuum diode (U.S. Pat. No. 3,789,471)which comprises a substrate carrying an electrically conducting layer,and a dielectric layer carried by the electrically conducting layer andprovided with a window with a cone-shaped cathode located in the window.The cathode has its base electrically contacting the conducting layer,while the tip of the emitter is at the level of another conducting layerlocated on the dielectric layer. The second conducting layer has awindow as well, which is in register with the window of the dielectriclayer. An anode is located on the conducting layer so as to hermeticallyseal the evacuated space established by the windows in the dielectriclayer and the second conducting layer. A positive voltage is applied tothe anode with respect to the cathode, and due to a short spacingbetween the anode and the cathode tip produces, a high-intensityelectric field at the cathode tip. As a result, a field emission ofelectrons starts from the cathode towards the anode, and an electriccurrent results in its circuit. Such a device can find application as aheat-and-radiation-resistant diode. The device is, however,disadvantageous in having a low time-dependent working stability, whichis accounted for by the bombarding effect produced by the ions ofresidual gases, with the resultant increased radius of curvature of thecathode. The electric field intensity at the cathode tip thus diminishesand hence the field-emission current in the anode circuit decreases.

The above processes proceed most efficiently at a small radius ofcurvature of the cathode tip, while the construction of the deviceprevents an efficient degassing of the evaluated space by heatingbecause the space is confined. Moreover, the materials of the vacuumdiode differ in their coefficients of linear expansion, and the choiceof such materials is limited by production techniques, which are verycomplicated and are in turn responsible for a high cost of the device.

Known in the art also is a field-emission diode (cf. Fabrication ofLateral Triode with Comb-Shaped Field-Emitter Arrays, by Junji Itoh,Kazunari Vishiki, and Kazuhiki Tsuburaya, Proceedings of theInternational Conference on Vacuum Microelectronics, 1993, Newport USA,pp. 99-100).

The device comprises a dielectric substrate, a film cathode (emitter), agate, and a film anode. The gate (that is, a layer of an electricallyconducting material) is located in a recess provided in the substratebetween the anode and the cathode. A positive voltage (with respect tothe cathode) is applied to the anode, and a positive voltage (withrespect to the cathode) is applied to the gate, creating ahigh-intensity electric field at the edge of the cathode to establishfield emission of electrons towards the end face of the anode, wherebyan electric current arises in the anode circuit.

One of the disadvantages inherent in this device resides in a lowoperating dependability and stability due to a necessity for applicationof a rather high anode voltage (i.e., about 150V). This in turn adds tothe danger of ionization of the residual gas molecules, while theresultant ions bombard the cathode edge, thereby changing the edgegeometry and hence increasing the spacing between the anode and the edgeof the cathode. As a result, the electric field intensity at the cathodeedge decreases, as well as the field emission current. The risk ofionization of the residual gas molecules is also rather high in thisdevice, due to a large distance between the emitter edge and the anodeend face. Bringing the anode end face nearer to the cathode edge is avery difficult task, because the gate is interposed between the anodeand cathode. Hence, an adequately high vacuum is needed for operation ofthe device. Because electrons are bombarding only the anode end face thedevice is of low dependability and it might become considerably heatedand destroyed, due to high densities of the electron flow. In addition,since the electron flow does not spread over the entire surface, thedevice features limited functional capabilities; that is, its field ofapplication is much restricted. Since the device requires rather highgate voltages (up to 110V) and anode voltages (up to 150V), the deviceconsumes much power, and is disadvantageous in this respect. Also, thehigh voltages applied cause an increased danger of electric breakdownbetween the electrodes, e.g., between the cathode edge and the gate.This type of device is of low operating dependability and stability,especially under conditions of industrial vacuum, is uneconomic as topower consumption, and has but a restricted field of application.

SUMMARY OF INVENTION

It is a primary object of the present invention to provide afield-emission device capable, due to a change in the direction of theelectron flow, of reducing considerably power consumption, increasingits operating dependability, and extending much its functionalcapabilities.

The foregoing object is accomplished due to the fact that in afield-emission device according to the invention, comprising an anodeand a cathode, both placed on a substrate made of a dielectric, theanode is located below the level of a cathode edge that faces towardsthe anode.

This makes it possible to reduce the input power of the device, increaseits operating reliability, and extend much the functional capabilitiesof the present field-emission device.

It is preferable that a first layer of dielectric material be interposedbetween the anode and cathode, and that a window be made in thedielectric layer, while the cathode edge facing toward the anode servesas the emitter. This enables one to obtain a microfocused electron beam.

It is also preferable that the window provided in the dielectric layerhave larger geometric dimensions than the window provided in thecathode. The anode surface in the area of the window may thus beprotruding or bulging, while the cathode edge serving as the emitter maybe toothed.

All the features mentioned before provide for a lower anode voltage thatcauses field emission of electrons, thus decreasing the input power.

It is practicable that the adjacent teeth of the cathode edge beseparated by a gap, and each of the edge teeth may be connected to thecathode itself through a load resistor. Such a feature adds to theoperating stability of the device.

It is advantageous to locate a layer of material which establishes,together with the material of the cathode, a Schottky barrier on thecathode surface in a close location to the edge serving as the emitter.

It is likewise practicable that a first layer of a current-conductingmaterial be interposed between the substrate and the dielectric layeraround the anode. The edges of the first layer of a current-conductingmaterial that are situated close to the anode may be bent out towardsthe emitter. In addition, a second layer of a dielectric material may beapplied to the cathode surface in the area of the window, with a secondlayer of a current-conducting material applied being placed on thesecond layer of a dielectric material.

As a result, a reduced anode voltage and hence a lower power consumptionare attained. Moreover, the functional capabilities of the device areconsiderably extended.

If desired, the edges of the second layer of a current-conductingmaterials located in the area of the window may be bent out towards theemitter. This feature extends substantially the functional capabilitiesof the device, makes it possible to apply voltage to the anode and thecurrent-conducting layer simultaneously, whereby the power consumptionof the device is reduced still more.

It is also possible that a second layer of a dielectric material may beapplied to the cathode surface in the area of the window and that asecond layer of a current-conducting material be applied to the surfaceof the second layer of a dielectric material. Such an embodimentcontributes to extended functional capabilities of the device, making itpossible to apply voltage to the anode, the first and secondcurrent-conducting layers.

It is advantageous that a layer of a material featuring a high secondaryemission ratio be applied to the anode surface, which results in anincreased electron flow and hence extends the functional capabilities ofthe device.

It is practicable to apply a phosphor layer to the surface of the secondlayer of a current-conducting material in the area of the window,extending the functional capabilities of the device, making possible dueto phosphor luminescence on the second current-conducting layer adisplay producing less harmful radiation effects.

Also, a layer of a material which has a high secondary-emission ratiomay be applied to the surface of the second layer of acurrent-conducting material. This makes it possible to extend stillfurther the functional capabilities of the device, that is, to provide amultistage current amplifier on the basis of the present field-emissiondevice.

The edges of the second layer of a current-conducting material may bebent out towards the emitter, with resultant reduced power consumptionof the device. Application of a phosphor layer to the anode surface isalso permissible, with the result that a possibility is provided ofdeveloping displays having low harmful radiation effects.

It is advantageous that the anode in the area of the window and thesubstrate be made of an optically transparent material, which enablesthe picture to be viewed from both sides of the display screen.

A layer of a material having high luminous reflectance may be applied tothe anode surface in the area of the window so as to enhance theluminescent emission of the display screen. It is also possible that thecathode edge serving as the emitter, be made of a material havingnegative electron affinity. Such a construction feature will reduce thepower consumption of the device and add to its operating dependability.

It is possible for the substrate in the area of the window to have arecess and the anode be accommodated in that recess. Such a constructionadds to the display reliability and enhances the picture quality due tobalancing the luminance on the surface of a light-emitting dot. A hot(thermionic) cathode may be provided in the close vicinity of thewindow, adding to the display luminance due to an additional source ofelectrons emitted by the hot cathode.

In one embodiment of the field-emission device, the anode in the area ofthe window is composed of at least two semiconductor layers differingfrom each other in the type of conduction. This greatly extends thefield of application of the device, because this embodiment of thedevice can be used as a highly sensitive current amplifier.

Both the anode and the cathode in the field-emission device may beshaped as ribbons which are mutually intersected and separated from oneanother by a dielectric layer, and window may be provided at the placeof intersection of the ribbons. In this case the layer of the materialestablishing the Schottky barrier may be shaped as a ribbon arrangedparallel to the anode ribbon. In addition, the layer of acurrent-conducting material may also be shaped as a ribbon situated onat least one side of the anode ribbon.

In another embodiment of the field-emission device, a plurality ofanodes appear as ribbons arranged parallel to one another, and aplurality of cathodes shaped as ribbons are also arranged parallel toone another and intersecting anode ribbons so as to establish an array.This enables one to provide a display screen having high resolution, ora TV screen having high picture sharpness.

It is advantageous that the anode surface at the place of location ofthe windows belong to the same ribbon-type cathode and be coated by alayer of phosphor differing in the color of its luminescent emissionfrom the adjacent one. This makes it possible to provide ahigh-resolution color display, a television system featuring highpicture sharpness, and special-purpose equipment having high-densityvisual information.

It is practicable that hot cathodes may be positioned above the arraysurface, the cathodes appearing as filaments arranged parallel to oneanother and directed lengthwise the anodes. The hot cathodes add to thescreen brightness.

The field-emission device of the present invention may includeelectronic switches operating on the basis of field emission ofelectrons and being situated along the perimeter of the ribbon-typeanodes, cathodes, current-conducting layers and layers establishingtogether with the material of the cathode the Schottky barrier. Such aconstruction arrangement of the device is featured by a simpleproduction technique and hence provides for reduced cost.

BRIEF DESCRIPTION OF THE DRAWINGS

In what follows the invention is illustrated by some specific exemplaryembodiments thereof to be read with reference to the accompanyingdrawings, wherein:

FIG. 1 is a general diagrammatic view of a simplest embodiment of afield-emission device, according to the present invention;

FIG. 2 is a diagrammatic view of an embodiment of a field-emissiondevice having a window, according to the present invention;

FIG. 3 is a diagrammatic view of an embodiment of a field-emissiondevice having an anode provided with a bulge, according to the presentinvention;

FIGS. 4 and 5 schematically illustrate an embodiment of a field-emissiondevice provided with a toothed cathode, according to the presentinvention;

FIGS. 6, 7, 8, and 9 schematically illustrate the various embodiments ofa field-emission device, making use of the Schottky effect, according topresent the invention;

FIGS. 10, 11, and 12 schematically illustrate the various embodiments ofa field-effect device, comprising layers of a current-conductingmaterial, according to the present invention;

FIG. 13 illustrates the embodiments of FIGS. 10, 11, and 12 showingvarious versions of application of a phosphor layer and of a layer of amaterial having a high secondary-emission ratio, according to thepresent invention;

FIG. 14 is a schematic view of an embodiment of a field-emission devicehaving a transparent anode and/or substrate, according to the presentinvention;

FIG. 15 is a view of FIG. 14 showing a field-emission device having alayer featuring the negative electron affinity and applied to theemitter, and another layer of a material having high luminousreflectance, according to the present invention;

FIG. 16 is the same as FIG. 15, showing a field-effect device having theanode made up of two semiconductor layers differing in the type ofconduction, according to the present invention;

FIGS. 17, 18, 19, 20, and 21 illustrate schematically variousembodiments of a field-emission device, comprising a plurality ofribbon-type anodes and a plurality of ribbon-type cathodes, whichestablish an array, according to the present invention; and

FIG. 22 represents schematically an embodiment of the field-emissiondevice, comprising electronic switches connected to the array along theperimeter thereof, according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

A field-emission device according to the present invention comprises ananode 1 (FIG. 1) and a cathode 2, both of them being placed on asubstrate 3 made of a dielectric material. The level A--A at which theanode 1 is disposed must be below the level B--B at which is situated anedge 4 of the cathode which faces toward the anode 1, the edge 4 servingas the emitter. In the operative state the field-emission device is tobe placed under vacuum.

The field-emission device of FIG. 1 operates as follows. A positivevoltage is applied to the anode 1 with respect to the cathode 2. Due tothe spacing between the anode 1 and the emitter 4, a high intensityelectric field arises at the emitter 4, which provides field emission ofelectrons from the emitter 4 to the anode 1, and an electric currentarises in the electric circuit of the anode 1. A distribution of theelectron flow occurs over the whole surface of the anode 1, with theshortest flight path of the electrons being from the emitter 4 to theanode 1. The short electron flight path is due to a close spacingbetween the emitter 4 and the surface of the anode 1. On that account,the danger of ionization of the residual gas molecules due to theircollision with electrons is low; hence, the formation of ions whichcould bombard the emitter 4 to change its geometry and thus to upsetstability of emission, is also of low probability. This accounts forstable operation of the field-emission device with time under conditionsof industrial vacuum. Distribution of the electron flow over the entiresurface of the anode 1 makes it possible to prevent its localoverheating at high density of field-emission current. This renders thefield-emission device of FIG. 1 more reliable in operation. Constructionof the field-emission device makes it possible to vary within a widerange the configuration of the anode 1, its material, or the materialwhich coats the anode surface, thus extending considerably the field ofapplication of the present field-emission device.

It is due to a short spacing between the emitter 4 and the anode 1 thata high-intensity electric field can be established, which acceleratesthe flight of electrons towards the anode 1 at low voltages appliedthereto. This enables the power input of the device to be much reducedand also makes the device favorably comparable with field-emissiondevices known heretofore.

Application of low anode voltages also virtually avoids electricbreakdown between the anode 1 and the emitter 4, which provides highoperating dependability of the present field-emission device. A uniqueadvantage of the herein-disclosed field-emission device thus resides insimple production techniques thereof and hence in the resultant lowcost. The present field-emission device can find application as, e.g., aheat-and-radiation-resistant diode featuring superhigh operating speed.

In the field-emission device of FIG. 2 a first layer 5 of a dielectricmaterial is interposed between the anode 1 and the cathode 2. A passageor window 6 is provided in the cathode 2 and the dielectric layer 5,while the edge of the cathode 2 which faces towards the anode 1 servesas the emitter 4. The device according to FIG. 2 features a more uniformdistribution of electron flow density. This flow is emitted by theemitter 4 over the area of the surface of the anode 2 situated in thewindow 6. Because of the more uniform electron flow density, the surfaceof the anode 1 is heated more uniformly under the bombarding effect ofelectrons, thus ensuring higher operating dependability of the device.

Moreover, a clear advantage of such a field-emission device is acomplete freedom from defocusing of the electron flow, since the area ofthe anode 1 bombarded by electrons is strictly defined by the dimensionsof the window 6 provided in the dielectric layer 5 and in the cathode 2.

The geometrical dimensions of the window 6 (FIG. 2) made in thedielectric layer 5 may slightly exceed those of the window 6 provided inthe cathode 2, with the result that the emitter 4 stands above the firstdielectric layer 5. The screening effect of the first dielectric layer 5on the emitter 4 and hence on the voltage on the anode 1 causing fieldemission of electrons may thus be reduced still more. In addition,electric breakdown between the emitter 4 and the anode 1 over thesurface of the layer 5 becomes less probable.

In FIG. 3, the area of the surface of the anode 1 in the vicinity of thewindow 6 has a raised protrusion or surface bulge 7. Provision of thebulge 7 enables the voltage on the anode 2 to be reduced still more,this being due to a shorter interelectrode distance (that is, thespacing between the emitter 4 and the surface of the bulge 7), overwhich an electric field is built up to cause field emission of electronsfrom the emitter 4. This contributes to a higher reliability of thedevice and lower power consumption.

In addition, the field-emission device of the present invention mayfeature an edge of the cathode 2 serving as the emitter 4 and beingtoothed as indicated at 8 (FIGS. 4, 5). A gap may be provided betweenadjacent teeth 8, and each of the teeth 8 may be connected to thecathode 2 through a load resistor 9.

Provision of the emitter 4 in the form of the teeth 8 also reduces thevoltage on the anode 1 required to cause field emission, since for thesame voltage applied to the anode 1 the electric field intensity at thetooth 8 is higher than at the edge of the cathode 2 of FIGS. 1, 2, 3serving as the emitter 4. The load resistor 9 through which the tooth 8is connected to the cathode 2, restricts the field-emission currentmagnitude at which the tooth 8 might be destroyed and also smooths outcurrent ripples on the tooth 8, whereby the present field-emissiondevice operates more reliably.

A layer 10 of a material may be applied to the surface of the cathode 2(FIGS. 6, 7, 8, 9) in close proximity to the edge serving as the emitter4. The layer 10 together with the material of the cathode 2 forms aSchottky barrier. In this particular case the material from whichcathode 2 is made, or least its area around the window 6, is asemiconductor, while the layer 10 forming the Schottky barrier, shouldbe made of a metal.

When the emitter 4 is toothed (FIGS. 4, 5, 9) the layer 10 is to beapplied as a thin ribbon encircling the emitter 4 so that the layer 10does not contact the load resistor 9. When the emitter 4 is not toothedthe layer 10 may be provided in the way described above, or it may beapplied to the entire surface of the cathode 2 except for an area spacedsomewhat apart from the edge of the cathode 2 serving as the emitter 4.

The field-emission device of FIGS. 6, 7, 8, and 9 operates as follows. Apositive voltage is applied to the anode 1 with respect to the cathode 2so as to cause field emission of electrons from the emitter 4 toward theanode 1, thus producing field-emission current in the electric circuitof the anode 1. A negative voltage is applied to the metal layer 10 withrespect to the semiconductor cathode 2. The portion of cathode 2 locatedunder the layer 10 is depleted of electrons, and conduction in thatportion of the cathode 2 decreases. The current in the circuit of theanode 1 is thus reduced. With some negative voltages (-7 to -10V),conduction of cathode 2 may cease altogether, and current in theelectric circuit of the anode 1 may discontinue, too. Thus, one cancontrol the field-emission current in the electric circuit of the anode1 till its complete discontinuation by changing the value of thenegative voltage applied to the layer 10 within approximately -4 and-10V. Such low values of the control voltage provide for high stabilityand operating dependability of the present field-emission device, andalso reduce its power consumption.

The field-emission device of the present invention may also comprise(FIGS. 10, 11 ) a first layer 11 of a current-conducting material,interposed between the substrate 3 and the dielectric layer 5, whileedges 12 of the first layer 11 of current-conducting material which arelocated close to the anode 1 may be bent out towards the emitter 4.

When the cathode 2 is made of a current-conducting material (FIG. 10)the field-emission device of the present invention operates as follows.A constant positive voltage is applied to the anode 1 with respect tothe cathode 2, and a positive voltage is applied to the first layer 11of a current-conducting material with respect to the cathode 2, thevalue of such voltage varying within approximately 20 and 30 V. In viewof a short distance between the emitter 4 and the edge 12 of the layer11, a high-intensity electric field is established on the emitter 4which causes field emission of electrons towards the anode 1, and anelectric current arises in the anode electric circuit. The magnitude ofcurrent in the circuit of the anode 1 can be controlled by changing thevoltage applied to the current-conducting material layer 11. Thefield-emission device of the embodiment described above can be used asan amplifier of weak electric signals arriving at the layer 11.

The cathode 2 (FIG. 11) or a portion thereof round the window 6 may bemade of a semiconductor material, to which a layer 10 of material isapplied, forming the Schottky barrier, applied at a distance from theedge of the cathode 2 serving as the emitter 4. This form offield-emission device operates in a way similar to that described abovewith the sole difference that an additional voltage can be applied tothe material layer 10 to change the current flowing along the electriccircuit of the anode 1 in the manner set forth above with reference toFIGS. 6, 7, 8, and 9. Thus, the field-emission device, according to FIG.11 functions as a mixer of two electric signals one signal of whicharrives upon the layer 11, and the other signal upon the layer 10. Theresult is that an intermediate-frequency signal can be produced in thecircuit of the anode 1.

The field-emission device of the present invention may also incorporatea second layer 13 of a dielectric material applied to the surface of thecathode 2 (FIG. 12) in the area of the window 6, and a second layer 14of a current-conducting material placed on layer 13, with edges 15 ofthe layer 14 situated in the area of the window 6 preferably being benttowards the emitter 4.

When the cathode 2 is made of metal, the field-emission device of FIG.12 operates as follows. A positive bias is applied to the anode 1 withrespect to the cathode 2, which voltage establishes a high-intensityelectric field on the emitter 4, causing field emission of electrons tothe anode 1.

A negative voltage is then applied to the layer 14 with respect to theemitter 4, and the intensity of the electric field decreases, and thefield emission current in the electric circuit of the anode 1 isdiminished. By changing the voltage applied to the layer 14 within arange between approximately -10 and -30V, one can control thisfield-emission current.

The device of FIG. 11 may be made so that when the cathode 2 (or aportion thereof located near the window 6) is made of a semiconductormaterial, and a layer of a material forming a Schottky barrier togetherwith the surface of the cathode 2, is placed on the cathode surface somedistance apart from the emitter 4. Such a field-emission device wouldoperate in the manner described of FIG. 11 and function as a mixer ofelectric signals, one of which arrives upon the current-conductingmaterial layer 14 and the other arriving upon the layer 10 of the othermaterial forming the Schottky barrier.

A field-emission device of the present invention may also comprise (FIG.13) the first layer 11 of a current-conducting material interposedbetween the substrate 3 and the layer 5 of a dielectric materials aroundthe anode 1. The edges 12 of the first layer 11 located near the anode 1may be bent out toward the emitter 4, and the second layer 13 may bemade of a dielectric material applied to the surface of the cathode 2 inthe area of the window 6. The second layer 14 of a current-conductingmaterial is placed on layer 13. A first layer 16 featuring a highersecondary-emission ratio may be applied to the surface of the anode 1.The layer 16 and either a phosphor layer 17 or a second layer 17' of amaterial having a higher secondary-emission ratio may be applied to thesurface of the layer 14 close to the window 6.

When the phosphor layer 17 is applied to the surface of the layer 14close to the window 6, the field-emission device operates as follows. Apositive voltage is applied to the anode 1 with respect to the cathode2. A positive voltage is applied to the first layer 11 of acurrent-conducting materials with respect to the cathode 2, such voltageestablishing, due to a short spacing (0.1-0.3 μm) between the edge 12 ofthe layer 11 and the emitter 4, a high-intensity electric field on theemitter 4. This causes field emission of electrons from the emitter 4 tothe anode 1 on which the layer 16 is situated. While bombarding thelayer 16, electrons cause secondary emission from the layer 16. There isapplied a positive voltage to the second layer 14 with respect to thecathode 2, which is in excess of the voltage applied to the layer 11,with the result that the secondary electrons start bombarding thephosphor layer 17 so as to cause it to luminesce.

When the layer 17' having a higher secondary-emission ration is appliedto the layer 14 in the area of the window 6 rather than the phosphorlayer 17, the electrons bombarding the layer 17' also cause the emissionof the secondary electrons therefrom. These secondary electrons may bepicked up by an additional anode (not shown in FIG. 13) to which avoltage is applied that exceeds that applied to the layer 14. Thefield-emission device of this embodiment functions as two-stage currentamplifier. Though FIG. 13 illustrates a field-emission device comprisingtwo dielectric layers 5 and 13 and two current-conducting layers 11 and14 which alternate, there may be many more such alternating layers, andeach successive layer of current-conducting material may include a layer17' of a material having a higher secondary-emission ratio applied toits surface in the area of the window 6, thus establishing a multistagecurrent amplifier.

The field-emission device shown in FIG. 14 may have both of the edges 12and 15 bent out towards the emitter 4, while the anode 1 may be locatedin a recess in the substrate 3 and be made of a transparentcurrent-conducting materials. A layer 18 of phosphor may be applied tothe anode 1, the substrate 3 may also be made of a transparentdielectric material, and the edge of the cathode 2 serving as theemitter 4 may be coated with a layer 19 (FIG. 15) of a material havingnegative electron affinity.

The field-emission device of FIG. 14 operates as follows. A positivevoltage is applied to the anode 1 with respect to the cathode 2, a15-30V positive voltage is applied to the layers 11 and 14 with respectto the cathode 2 to establish a high-intensity electric field on theemitter 4, which is due to a small distance between the edges 12, 15 andthe layers 11, 14, respectively. The result is field emission ofelectrons towards the anode 1 to which the phosphor layer 18 is applied.Upon being bombarded with electrons the phosphor layer 18 beginsluminescing and its luminescence can be viewed on both sides of thetransparent substrate 3.

The fact that the field-emission device has the layers 11 and 14, oreither of them, makes it possible to considerably reduce the voltagecausative of field emission of electrons to approximately 15-30V, andwhich is of paramount importance, to enhance the reliability of thefield-emission device. This results from the edges 12 and 15 of therespective layers 11 and 14 being bent out towards the emitter 4. For afixed thickness of the dielectric layers 5 and 13, the edges 12 and 15may be brought together with the emitter 4 at a minimum distance ofabout 0.1-0.2 μm, and any danger of an electric breakdown of thedielectric layers 5 and 13 is in effect ruled out.

Moreover, the field of application of the field-emission device havingthe layers 11 and 14 is extended so that the device can be used as amixer of electric signals, as a current-operated device, and as apicture display.

When the emitter 4 (FIG. 15) is coated with a layer 19 of a materialhaving negative electron affinity, it is not necessary to attain highintensity (about 10⁷ V/cm) of the electric field on the surface of thelayer 19, inasmuch as field emission of electrons is liable to arise insuch materials at much less values of electric field intensity and hencethe voltages applied to the layers 11 and 14 may be decreasedconsiderably.

A layer 20 (FIG. 15) of a material having a high value of luminousreflectance may be applied to the surface of the anode 1 in the area ofthe window 6, and the phosphor layer 18 may be in turn applied to thelayer 20. Application of layer 20 having high luminous reflectanceprovides for a reflecting effect with the phosphor layer 18 luminescingunder the bombarding effect of electrons, which intensifies, as it were,the luminescent brightness of the phosphor layer 18.

The anode 1 may be situated in a recess of the substrate 3, such recessbeing shaped as a hemisphere, and the layer 20 of a material having highluminous reflectance, coated with the phosphor layer 18 may be appliedto the anode 1. In this case, the luminescent emission of the phosphorlayer 18 can be focused.

If desired, a hot cathode (not shown in the Drawings) may be provided inthe close vicinity of the window 6 of the present field-emission device(FIGS. 1-15) and operate as follows. Electric current is passed throughthe hot cathode, which starts emitting electrons when heated. A positivevoltage is applied to the anode 1 with respect to the hot cathode toaccelerate electrons towards the anode 1, whereby the thermionic currentarises in the anode electric circuit. When the field-emission device ismade to the embodiments shown in FIGS. 1-9, a negative voltage isapplied to the cathode 2 with respect to the hot cathode and the latterstarts repelling the electrons, with the result that the thermioniccurrent in the circuit of the anode 1 decreases, and may ceasealtogether at some values of a negative voltage applied to the cathode.Thus, one can control the field-emission current in the circuit of theanode 1.

When the field-emission device (FIGS. 10-15) comprises both of thecurrent-conducting layers 11 and 14, or either of them, a positivevoltage may applied to both of the layers 11 and 14, or to either ofthem, with respect to the cathode 1, causing field-emission of electronsfrom the emitter 4 so that the thus-emitted electrons will additionallyincrease field-emission current in the electric circuit of the anode 1.

When the phosphor layer 18 (FIGS. 14, 15) is applied to the anode 1, thelayer is exposed to the effect of two bombarding flows of electrons,that is, both the thermionic and the field-emission ones so that thephosphor layer emits brighter luminescence.

The field-emission device of the present invention may have the anode 1(FIG. 16) composed of two semiconductor layers 21 and 22 in the area ofthe window 6, differing in the type of conduction. Located on thesubstrate 3 (FIG. 16) may be a hole-conduction layer 21 (p-layer), whilean electron-conduction layer 22 (n-layer) may be situated above thelayer 21. A field-emission device, according to this embodiment operatesas follows. A reverse (cutoff) voltage is applied to the n-p layers thefrom which anode 1 is made. A positive voltage with respect to thecathode 2 is applied to the layers 11 and 14 of current-conductingmaterial, causing field emission of electrons from the emitter 4. Theemitted electrons get in the accelerating electric field of the anode 1made up of the n-p layers forming a diode, which is connected in theblocking direction. Electron-hole pairs are generated in the diode underthe bombarding effect of electrons, and the pairs are disjoined by thediode intrinsic field. The result is that an electric current isgenerated in the diode electric circuit (i.e., the circuit of the n-players), the magnitude of such current being 100-1000 times that offield-emission current. The field-emission device made according to thepresent embodiment may be used as a highly sensitive current amplifier.Such field-emission device may also have the anode 1 made up of a numberof alternating semiconductor n-p layers, or in the form of the Schottkybarrier which extends the field of application of the field-emissiondevice of the present invention.

The field-emission device of the present invention may have the anode 1and the cathode 2 shaped as ribbons (FIGS. 17 and 18) intersecting oneanother and isolated by the dielectric layer 5, while the windows 6 areprovided at the place of intersection of the ribbons. The field-emissiondevice may also comprise a plurality of the ribbon-type anodes 1 (FIGS.19 and 20) arranged parallel to one another, and a plurality of theribbon-type cathode 2 arranged also parallel to one another andintersecting the ribbon-type anodes 1, thus forming an array. Recessesmay be provided in the substrate 3 at the places when the windows 6(FIG. 21) are located, such recesses accommodating the portions of theribbon-type anodes 1 to which the phosphor layers 18 may be applied. Thesubstrate 3 and the portions of the ribbon-type anodes 1 located in therecesses may be made of an optically transparent material. The phosphorlayers 18 located in the adjacent windows 6 and belonging to the sameribbon-type cathode 2 may differ in the color of the luminescentemission. The edge of the cathode 2 which is in fact the emitter 4, mayalso be toothed, and a gap may be provided between the adjacent teeth 8,each of which may be connected to the ribbon-type cathode 2 through theload resistor 9, in the manner shown in FIGS. 4 and 5.

When the ribbon-type cathodes 2 (FIGS. 17 and 18) are made of acurrent-conducting material, the field-emission device forming an array,operates as follows. A positive voltage is applied to one of theribbon-type anodes 1 with respect to one of the ribbon-type cathodes 2,which voltage causes field emission of electrons at the place of theirintersection from the emitter 4. The phosphor layer 18 at the place ofintersection starts luminescing under the bombarding effect of theemitted electrons. Thus, by applying a positive voltage to thecorresponding ribbon-type anodes 1 with respect to the correspondingribbon-type cathodes 2 alternately at a frequency unperceivable by humaneye, one can establish a monochrome (when the phosphor layer 18 is ofthe same color of emission on all portions of the ribbon-type anodes 1in the windows 6), or a color luminescent picture. Brightness of thepicture luminescence or that of the individual dots in the picture canbe adjusted by the value of the voltage applied to the ribbon-typeanodes 1. Where both the substrate 3 and the portions of the ribbon-typeanodes 1 at the places of location of the windows 6 are transparent, thepicture so formed can be viewed on both sides of the field-emissiondevice shaped as an array. This novel feature of the field-emissiondevice of the present invention renders it undoubtedly valuable from thestandpoint of extending its field of application.

An extremely important advantage of this field-emission device is lowcapacity value of the capacitors established by the portions of theribbon-type anodes 1 and the ribbon-type cathodes 2 at the places oftheir intersection. This is accounted for by the fact that the windows 6are provided in the ribbon-type cathodes 2, much decreasing the surfaceoverlapping the ribbon-type cathodes and the ribbon-type anodes. Thetransient electric processes of charging and discharging of suchcapacitors are thus minimized in the field-emission device of thepresent invention. This, in turn, enables one to turn on alternatelyluminescent dots having superhigh operating speed (the changeover timemay be less the 1 μsec). Hence the picture being created may be composedby a great many luminescent dots, and thus feature very high sharpness,and the field-emission device may comprise approximately 2000×2000crossovers and more arranged on the X- and Y-axes of the array, eachmaking possible the formation of a luminescent dot. This is alsopromoted by the complete absence of defocusing an electron beam thatcauses luminescence of a single dot.

The field-emission device proposed herein may be used for ahigh-definition television system, as well as for developing specialequipment capable of reproducing a large scope of visual information ona small array area.

Another advantage of the field-emission device of the present inventionis the possibility of placing a hermetically-sealing glass directly onits surface, which simplifies much the production techniques of thedevice and hence reduces its cost.

It should be also understood that hot cathodes may be provided in theform of filaments situated above the surface of the array-shapedfield-emission device a short distance therefrom, such filaments beingarranged parallel to one another and extending lengthwise to theribbon-type anodes 1 (FIGS. 17-21).

A field-emission device, according to such an embodiment, operates asfollows. Electric current is passed through the hot cathodes thusheating them, whereby thermionic emission of electrons occurs. Apositive voltage is applied to one of the ribbon-type anodes 1 withrespect to the hot cathode, whereas a negative voltage is applied to allthe ribbon-type cathodes. When one of the cathodes is released of anegative voltage, the shielding of electrons at the place ofintersecting with deenergized ribbon-type cathode 2 by negative voltageribbon-type anode 1 ceases, and the electrons emitted by the hotcathodes will fly towards that portion of the ribbon-type anode 1 whichis situated in the window 6 of the place of intersection of the anodeand cathode ribbons involved. The electrons bombard the phosphor layer18 situated on the portion of the ribbon-type anode 1 in the window 6and cause the phosphor layer to luminesce. Thus, a luminescent picturemay be created on the present field-emission device by alternatelyapplying a positive bias to the corresponding ribbon-type anodes 1 anddisconnecting the corresponding ribbon-type cathodes 2 from a negativebias.

This construction is exhibits high reliability, since low voltage valuesmay be applied to the ribbon-type anodes (approximately +10 to +15 V)and to the ribbon-type cathodes 2 (approximately -10 to -15V). In thiscase there is no necessity for reducing the spacing between the edge ofthe ribbon-type cathode 2 serving as the emitter 4, and the surface ofthe ribbon-type anode 1, inasmuch as field emission in the presentfield-emission device may not be used altogether.

When the ribbon-type cathodes 2 of the field-emission device (FIGS. 19and 20) are made of a semiconductor material, there may be providedlayers 10 in the form of ribbons placed on the cathode surfaces somedistance apart from the end faces of the cathodes 2 and directedlengthwise the ribbon-type anodes 1. The semiconductor ribbons so placedform, together with the material of the ribbon-type cathodes 2, aSchottky barrier.

When the emitter 4 of each of the ribbon-type cathodes 2 is providedonly on the two sides of the window 6 along each of the ribbon-typeanodes 1, the layers 10 of the material mentioned above may be locatedalso only on two sides of the window 6.

When the emitter 4 of each of the ribbon-type cathodes 2 is providedthroughout the perimeter of the window 6, the layer 10 of material isarranged in the area of the window 6 as illustrated in FIGS. 7 and 8.

When the emitter 4 (FIGS. 4 and 5) is provided with teeth 8 and a gap isprovided between the adjacent teeth 8, and each of the teeth 8 isconnected to the ribbon-type cathode 2 (FIGS. 19 and 20) through theload resistor 9 (FIGS. 4 and 5), the layer 10 is arranged in the area ofthe window 6 as shown in FIG. 9.

In the field-emission device presented in FIGS. 19 and 20 a constantpositive voltage may be applied to each of the ribbon-type anodes 1 withrespect to each of the ribbon-type cathodes 2, such voltage causingfield emission of electrons from the emitter 4 and hence luminescence ofthe phosphor layer 18. A negative voltage may be applied to each of theribbon layers 10 with respect to each of the ribbon-type cathodes 2.

The edges of the ribbon-made layers 11 and 14 in the area of the window6 may be bent out toward the emitters 4. The phosphor layers 18differing in color of luminescent emission may be located in theadjacent windows 6 belonging to the same ribbon-type cathode 2 on thesurface of the anodes.

The field-emission device, according to this embodiment operates asfollows. A constant positive voltage of the various values may beapplied to the ribbon-type anodes 1 (FIGS. 19 and 20) with respect tothe ribbon-type cathodes 2, depending on the color of luminescentemission of the phosphor layers 18 applied to the given ribbon-typeanode 1. A positive voltage is applied to the ribbon layers 11 and 14with respect to the ribbon-type cathodes 2, whereby a color picture maybe created on the present field-emission device. In this particularconstruction of the device, with the same voltage applied the luminanceof the various phosphor layers 18 is different (e.g., the green-emissionphosphor layers 18 are brighter than the red and blue-emission ones, andthe red-emission layers are brighter than the blue-emission ones).

Thus, the field-emission current and the brightness of the luminescentemission may be varied at the place of intersection of one of the anodes1 (to which a positive voltage is applied) with respect to one of thecathodes 2 which intersects at this place the layer 10 of material. Thevariants of arrangement of the layer 10 in the area of the window 6 maybe as shown in FIGS. 6-9, or in the form of two ribbons of the layer 10as shown in FIG. 20. The luminescent emission brightness may be variedat the dots of intersection till their complete disappearance bychanging the value of a negative voltage applied to the ribbon-shapedlayer 10 of a material (FIGS. 6-9), or to a layer made up of two ribbonssituated on both sides of the window 6 (FIG. 19).

The field-emission device shaped as an array may also comprise aplurality of parallel ribbon-shaped layers 11 and 14 (FIG. 21) made of acurrent-conducting material and arranged parallel to the ribbon-typeanodes 1 (FIG. 21), whereby the picture color intensity is compensated.

The field-emission device of the invention may also comprise electronicswitches 23 (FIG. 22) situated along the perimeter of the ribbon-typeanodes 1, the ribbon-type cathodes 2, the ribbon-shapedcurrent-conducting layers 11, 14, and the ribbon-shaped layers 10, allof them operating on the concept of field emission. This to a greatextent enables the production techniques of the present field-emissiondevice to be simplified, since such electronic switches can bemanufactured within the scope of a single production process, whereby anarray-type field-emission device is produced, making it possible toconsiderably reduce its cost. In addition, the provision of thefield-effect electronic switches in the array of the device enables thepicture production scheme to be simplified to a great degree.

Industrial Applicability

The field-emission device herein disclosed is a fundamentally novelvariety of device. Having the anode situated below the cathode emitterprovides unique advantages and a broad range of functional capabilities.Among the principal of these advantages are: high operatingdependability and stability due to short distances between the emitterand the electrodes, whereby high intensity of the electric field on theemitter is attained; long-term operation under conditions of industrialvacuum; low values of the negative control voltage effecting controlover the emission current in the anode circuit and hence over theluminescence intensity of a phosphor layer present on the anode; noharmful radiation effects of the display due to low voltages applied;high phosphor luminescence intensity since the picture is viewed as areflection; possibility of balancing the brightness characteristics;extremely high resolution of monochrome and color displays due toabsence of defocusing the electron beams causing luminescence; simpleproduction process techniques and hence low cost and very wide field ofapplication of the device, which may be used as a supersensitive currentamplifier, superhigh-speed mixers of signals, displays on which thepicture can be viewed on both sides, and so forth; and low powerconsumption of any field-emission devices of the present invention.

Having described the invention above, various modifications of thetechniques, procedures, material and equipment will be apparent to thosein the art. It is intended that all such variations within the scope andspirit of the appended claims be embraced thereby.

I claim:
 1. An edge emitter display device, comprising:an anode having atop surface for receiving electrons; a cathode situated at a level abovethe anode and laterally displaced from the top surface of the anode, thecathode providing an opening above the top surface of the anode; thecathode having an emitting edge proximate the anode, the emitting edgeoperable to emit electrons when a positive voltage is applied to theanode with respect to the cathode; and a phosphor layer disposed abovethe top surface of the anode and below the level of the cathode, thephosphor layer operable to luminesce when struck with the electrons. 2.The device of claim 1, further comprising a first dielectric layerinterposed between said anode and said cathode, the first dielectriclayer having a window formed through it above the top surface of theanode, such that the window of the first dielectric layer exposes theemitting edge of said cathode.
 3. The device of claim 2, furthercomprising a window in said cathode, and wherein said window in saidfirst dielectric layer exceeds in dimensions said window in saidcathode.
 4. The device of claim 1, further comprising a layer of amaterial having negative electron affinity applied to said emitting edgeof said cathode.
 5. The device of claim 2, wherein said anode and saidcathode are shaped as strips mutually intersecting at a place ofintersection and separated by the first dielectric layer, and saidwindow of the first dielectric layer being situated at the place ofintersection.
 6. The device of claim 1, wherein the cathode has aplurality of emitting edges proximate the anode, each of the pluralityof emitting edges operable to emit electrons when a positive voltage isapplied to the anode with respect to the cathode.
 7. The device of claim1, wherein the emitting edge of the cathode comprises a plurality ofemitting regions.
 8. The device of claim 7, wherein the plurality ofemitting regions comprises adjacent teeth.
 9. The device of claim 8,wherein the emitting edge of the cathode provides a gap between each ofthe plurality of adjacent teeth.
 10. The device of claim 9, furthercomprising a load resistor, the load resistor coupled between theadjacent teeth and the cathode.
 11. The device of claim 1, wherein theanode is optically transparent.
 12. The device of claim 1, furthercomprising a substrate made of an optically transparent dielectricmaterial, wherein the anode is coupled to the substrate.
 13. The deviceof claim 1, wherein the anode comprises a surface of high luminousreflectance.
 14. The device of claim 2, wherein the emitting edge of thecathode surrounds the opening above the top surface of the anode. 15.The device of claim 2, wherein the top surface of the anode comprises abulge situated proximate the window of the first dielectric layer. 16.The device of claim 2, further comprising:a substrate made of adielectric material, wherein the anode is coupled to the substrate; anda current conducting layer interposed between the dielectric layer andthe substrate such that a proximate edge of the current conducting layerextends between the anode and the emitting edge of the cathode.
 17. Thedevice of claim 16, wherein the proximate edge of the conducting layeris bent toward the emitting edge of the cathode.
 18. The device of claim2, further comprising:a second dielectric layer coupled to a top surfaceof the cathode, the second dielectric layer providing a window ofapproximately the same dimensions as the window of the first dielectriclayer; and a current conducting layer situated above the seconddielectric layer such that a proximate edge of the current conductinglayer is proximate the emitting edge of the cathode.
 19. The device ofclaim 18, wherein the proximate edge of the current conducting layer isbent down toward the emitting edge of the cathode.
 20. The device ofclaim 2, further comprising a substrate made of a dielectric material,the substrate having a recess, wherein the anode is coupled to thesubstrate at the recess.
 21. The device of claim 3, wherein the emittingedge of the cathode surrounds the opening above the top surface of theanode.
 22. The device of claim 5, further comprising a layer of acurrent conducting material shaped as a strip and situated on one sideof the anode.
 23. The device of claim 5, further comprising:a pluralityof anodes shaped as strips arranged substantially parallel to oneanother; and a plurality of cathodes shaped as strips arrangedsubstantially parallel to one another, and intersecting the plurality ofanodes shaped as strips at intersection points such that theintersection points form an array; wherein the dielectric layerseparates the plurality of anodes and plurality of cathodes, and furtherwherein the dielectric layer is formed to provide a window at each pointof intersection.
 24. The device of claim 23, further comprising aplurality of luminescent materials, disposed in a set of adjacent pointsof intersection along a same cathode strip, each luminescent materialoperable to emit a different color of light when struck with electrons.25. The device of claim 5, further comprising a hot cathode disposedabove a top surface of the array, the hot cathode operable to emitelectrons when current is passed through the hot cathode.
 26. The deviceof claim 25, wherein the hot cathode comprises a plurality of filamentssituated above the top surface of the array, the plurality of filamentsarranged substantially parallel the anodes shaped as strips.
 27. Thedevice of claim 5, further comprising a plurality of electronic switcheslocated along a perimeter of the anodes shaped as strips and thecathodes shaped as strips, the plurality of electronic switches operableto respond to the electrons.
 28. The device of claim 27, wherein theplurality of electronic switches comprise a plurality of field emissionelectronic switches.
 29. The device of claim 1, further comprising adielectric layer, wherein the anode is disposed upon the dielectriclayer.
 30. The device of claim 1, further comprising a substrate havinga dielectric surface, wherein the anode is disposed upon the substrate.31. The device of claim 30, wherein the cathode is disposed upon thesubstrate.
 32. The device of claim 1, further comprising:a substrate;and a dielectric layer, wherein the dielectric layer is disposed uponthe substrate, and the anode is disposed upon the dielectric layer. 33.The device of claim 1, further comprising a layer of high luminousreflectance disposed between the anode and the phosphor layer.
 34. Thedevice of claim 1, further comprising a material disposed upon a topsurface of the cathode proximate the emitting edge such that a Shottkybarrier is formed.
 35. The device of claim 2, further comprising amaterial disposed upon a top surface of the cathode proximate theemitting edge such that a Shottky barrier is formed.
 36. The device ofclaim 5, further comprising a material disposed upon a top surface ofthe cathode proximate the emitting edge such that a Shottky barrier isformed, the material shaped as a strip arranged substantially parallelto the anode.